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| Dual Power MOSFET Modules N-Channel Enhancement Mode VMM 15-045 VDSS ID25 RDS(on) 73 4 8621 5 = 450 V = 20 A = 0.2 4 23 5 6 1 78 Symbol Test Conditions Maximum Ratings per switch 450 450 20 30 20 16 80 175 -40 ... +150 150 -40 ... +125 V V V V A A A W C C C V~ V~ Nm lb.in. g Features q q VDSS VDGR V GS V GSM I D25 I D85 I DM PD TJ TJM Tstg VISOL Md Weight TJ = 25C to 150C TJ = 25C to 150C; R GS = 20 k Continuous Transient T K = 25C T K = 85C T K = 25C, tp = 10 s T K = 25C 1, 4 = Gate, 5, 8 = Drain 6, 7 = Source, 2, 3 Kelvin Source 50/60 Hz IISOL 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32 UNF) 3000 3600 2-2.5 18-22 28 q q q q q 2 independent MOSFET in 1 package Package with DCB ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin contact for easy drive UL registered E 72873 Applications Symbol Test Conditions Characteristic Values (T J = 25C, unless otherwise specified) min. typ. max. 450 2.0 5.5 V V q q q q VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, I D = 0.5 mA V DS = VGS , ID = 5 mA VGS = 20 V DC, VDS = 0 V DS = VDSS , VGS = 0 V, TJ = 25C V DS = 0.8 * VDSS, VGS = 0 V, TJ = 125C VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % AC motor speed control for electric vehicles DC servo and robot drives Switched-mode and resonant-mode power supplies DC choppers 500 nA 0.5 mA 3 mA 0.18 0.2 Advantages q q q q Easy to mount with two screws Space and weight savings High power density Low losses IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 VMM 15-045 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 5600 VGS = 0 V, VDS = 25 V, f = 1 MHz 800 200 25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 15 (External), resistive load 45 250 75 110 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 15 40 with 30 m heat transfer paste Creepage distance on surface Strike distance through air Maximum allowable acceleration 17 9.6 50 S pF pF pF ns ns ns ns nC nC nC 0.7 K/W mm mm m/s2 Dimensions in mm (1 mm = 0.0394") gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd RthJK dS dA a V DS = 15 V; ID = 0.5 * ID25 pulsed Source-Drain Diode Symbol IS I SM VSD trr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 80 1.5 A A V Repetitive; pulse width limited by TJM IF = IS; VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 200 A/s, VDS = 100 V 600 ns IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
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